丝印：339；Package：SOT-23；N-Channel 2.5 V (D-S) MOSFET

General Description This N-Channel 2.5V specified MOSFET is has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Load switch Features VDS (V) = 20V RDS(ON)

文件：322.25 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：339；N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC con

文件：191.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：339；Package：SO14；Low-power quad voltage comparators

Features • Wide single supply voltage range or dual supplies for all devices: +2 to +36 V or ±1 V to ±18 V • Very low supply current (1.1 mA) independent of supply voltage • Low input bias current: 25 nA typ • Low input offset current: ±5 nA typ • Low input offset voltage: ±1 mV typ • Inp

文件：776.17 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：339；Package：TSSOP14；Low-power quad voltage comparators

Features • Wide single supply voltage range or dual supplies for all devices: +2 to +36 V or ±1 V to ±18 V • Very low supply current (1.1 mA) independent of supply voltage • Low input bias current: 25 nA typ • Low input offset current: ±5 nA typ • Low input offset voltage: ±1 mV typ • Inp

文件：776.17 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：339；Package：SSOP-B14；Ground Sense Comparator

文件：958.8 Kbytes 页数：56 Pages

ROHM

罗姆

丝印：339B；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99 Sn

文件：218.38 Kbytes 页数：3 Pages

FS

丝印：339B；Package：SMB；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.71 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：339B；Package：DO-214AA；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.47176 Mbytes 页数：7 Pages

DAESAN

丝印：339B；Package：SMC；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.62 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：339N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.15575 Mbytes 页数：11 Pages

Infineon

英飞凌