功率 MOSFET，N 沟道，150V，85A，8.8mΩ，Power56 封装中

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 8.8 mΩ at VGS = 10 V, ID = 67 A\n• Max rDS(on) = 9.4 mΩ at VGS = 8 V, ID = 33 A\n• 50% Lower Qrr than Other MOSFET Suppliers\n• Lowers Switching Noise/EMI\n•MSL1 Robust Package Design\n•100% UIL Tested\n•RoHS Compliant;

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安森美半导体

丝印：FDMS8D8N15C；Package：PQFN8；N?륝hannel Shielded Gate POWERTRENCH MOSFET

文件：292.91 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

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QFN8

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SOT23-3

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FAIRCHILD/仙童
SOT

FAIRCHILD/仙童

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