N-Channel Dual CoolTM Power Trench짰 MOSFET 60 V, 108 A, 2.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：280.09 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，双 CoolTM 56 Power Trench® MOSFET，60V，108A，2.3mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产。 先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性能。 • Dual Cool™ Top Side Cooling PQFN package\n• Max rDS(on) = 2.3 mΩ at VGS(on) = 10 V, ID = 29 A\n• Max rDS(on) = 3.3 mΩ at VGS(on) = 8 V, ID = 24 A\n• High performance technology for extremely low rDS(on)\n• 100% UIL Tested\n• RoHS Compliant;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 60 V, 80 A, 2.5 m廓

文件：283.61 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司