PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET

General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide

文件：588.16 Kbytes 页数：15 Pages

Fairchild

仙童半导体

30V，不对称双 N 沟道 MOSFET，PowerTrench® 功率级

该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET™ (Q2)旨在提供优化的功效。 • Q1： N沟道\n•VGS = 4.5 V且ID = 11时，最大RDS(on) = 11 mΩ Q2： N沟道\n•低电感封装缩短了上升/下降时间，从而减少了开关损耗\n•MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局\n•符合RoHS标准;

ONSEMI

安森美半导体

7.6mm (0.3 inch)/10.9mm (0.43 inch) Seven Segment Display

Description The 7.6 mm (0.3 inch) and 10.9 mm (0.43 inch) LED seven segment displays are designed for viewing distances up to 3 metres (10 feet) and 5 metres (16 feet). These devices use an industry standard size package and pinouts. All devices are available as either common anode or common cath

文件：311.98 Kbytes 页数：8 Pages

HP

安捷伦

WIPER CONTROLLER

文件：61.35 Kbytes 页数：3 Pages

HONGFA

宏发电声

N-Channel Enhancement Mode MOSFET

文件：520.51 Kbytes 页数：11 Pages

HUAYI

华羿微电