N 沟道，PowerTrench® MOSFET，75V，100A，3.7mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 3.01mΩ （典型值）@ VGS = 10V, ID = 50A\n•低FOM RDS(on) *QG\n•低反向恢复电荷，Qrr = 84nC\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

OptiMOS(TM)3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：284.87 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOS(TM)3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：399.23 Kbytes 页数：9 Pages

INFINEON

英飞凌

Single N-Channel POWERTRENCH MOSFET

文件：462.75 Kbytes 页数：8 Pages

ONSEMI

安森美半导体