FDMS037N08B

N 沟道，PowerTrench® MOSFET，75V，100A，3.7mΩ; •RDS(on) = 3.01mΩ （典型值）@ VGS = 10V, ID = 50A\n•低FOM RDS(on) *QG\n•低反向恢复电荷，Qrr = 84nC\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准\n;

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。

037N08N

OptiMOS(TM)3Power-Transistor

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

037N08N

OptiMOS(TM)3Power-Transistor

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

037N08NS

Superiorthermalresistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

FDMA037N08LC

SingleN-ChannelPOWERTRENCHMOSFET