N 沟道，PowerTrench® MOSFET，80 V，4 A，36.5 mΩ

This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. • Max rDS(on) = 36.5 mΩ at VGS = 10 V, ID = 4 A\n• Max rDS(on) = 56.9 mΩ at VGS = 4.5 V, ID = 3 A\n• Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm\n• Free from halogenated compounds and antimony oxides\n•RoHS Compliant;

ONSEMI

安森美半导体

丝印：037L；Package：WDFN6；Single N-Channel POWERTRENCH MOSFET

文件：462.75 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

OptiMOS(TM)3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：399.23 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS(TM)3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：284.87 Kbytes 页数：9 Pages

Infineon

英飞凌

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22793 Mbytes 页数：12 Pages

Infineon

英飞凌