N 沟道，PowerTrench® SyncFET™，30V，42A，4.9mΩ

FDMS0312S设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的rDS(on)。 该器件可被额外作为一个有效的单片肖特基体二极管使用。 •VGS = 10 V，ID = 18 A时，最大rDS(on) = 4.4 mΩ\n•VGS = 4.5 V，ID = 14 A时，最大rDS(on) = 5.8 mΩ\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•SyncFET肖特基体二极管\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

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N-Channel PowerTrench짰 SyncFETTM

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TECCOR