N 沟道，PowerTrench® MOSFET，20V，9A，18mΩ

该单N沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计而成，用于优化VGS = 1.8 V时专用MicroFET引线框上的rDS(ON)。 •VGS = 4.5V，ID = 9A时，最大rDS(on) = 18mΩ\n•VGS = 2.5 V，ID = 7.5 A时，最大rDS(on) = 24mΩ\n•VGS = 1.8 V，ID = 7 A时，最大rDS(on) = 32mΩ\n•薄型： 0.55 mm最大值，新的MicroFET 1.6x1.6薄型封装\n•不含有卤化合物和氧化锑\n•HBM静电放电保护等级为>2.5kV（注3）\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 20 V, 9 A, 18 m廓

文件：255.45 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

文件：79.05 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

文件：34.24 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

文件：69.45 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体