Dual N-Channel PowerTrench® MOSFET 40V, 87A, 2.6mΩ

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density. • Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 21 A\n• Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 17 A\n• Ideal for Flexible Layout in Secondary Side Synchronous Rectification\n• 100% UIL Tested\n• Termination is Lead-free and RoHS compliant;

ONSEMI

安森美半导体

Dual N-Channel PowerTrench MOSFET

文件：612.89 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 40V, 277A, 2.2m廓

文件：773.37 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 277A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.2mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：356.05 Kbytes 页数：3 Pages

ISC

无锡固电

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：664.94 Kbytes 页数：3 Pages

MCC