N 沟道，Power Trench® MOSFET，150V，9.4A，134mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •VGS = 10 V，ID = 2.8 A时，rDS(on) = 134 mΩ（最大值）\n•VGS = 6 V，ID = 2.4 A时，rDS(on) = 186 mΩ（最大值）\n•薄型 - 最大1 mm，采用Power 33封装\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel Power Trench짰 MOSFET 150 V, 9.4 A, 134 m廓

文件：324.51 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PROSLIC® SINGLE-CHIP FXS SOLUTION

Si3217x-C Features  Complete FXS solution in 5 x 7 mm  Performs all BORSCHT functions  Ideal for short to medium loops  Global programmability  Internal balanced or unbalanced ringing  Patented low power ringing  Simplified configuration and diagnostics  Supported by ProSLIC API

文件：653.56 Kbytes 页数：47 Pages

SKYWORKS

思佳讯

SINGLE-CHIP DUAL PROSLIC®

Si32260/1 Features  Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package  Performs all BORSCHT functions  Ideal for short- or long-loop applications  Ultra low power consumption  Internal balanced or unbalanced ringing  Patented low power ringing  Adaptive ringing  S

文件：1.2334 Mbytes 页数：59 Pages

SKYWORKS

思佳讯

N-Channel Power Trench MOSFET

文件：239.46 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司