N 沟道，Power Trench® MOSFET，20V，16.5A，5mΩ

此 N 沟道 MOSFET 是采用飞兆半导体先进的 Power Trench 工艺生产的稳固栅极版本。 已针对开关性能和超低 rDS(on)进行了优化。 •最大值 rDS(on)=5 mΩ（条件为 VGS=10 V、ID=16.5 A）\n•最大值 rDS(on)=6.4 mΩ（条件为 VGS=4.5 V、ID=14A\n•薄型 - 最大 1 mm，采用 Power 33 封装\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm

文件：197.05 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features • Single-Supply Operation from +1.8V ~ +5.5V • Rail-to-Rail Input / Output • Gain-Bandwidth Product: 1.8MHz (Typ@25°C) • Low Input Bias Current: 20pA (Typ@25°C) • Low Offset Voltage: 30µV (Max@25°C) • Quiescent Current: 180µA per Amplifier (Typ) • Operating Temperature: -45°C ~ +12

文件：624.66 Kbytes 页数：14 Pages

GAINSIL

聚洵

1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features • Single-Supply Operation from +1.8V ~ +5.5V • Rail-to-Rail Input / Output • Gain-Bandwidth Product: 1.8MHz (Typ@25°C) • Low Input Bias Current: 20pA (Typ@25°C) • Low Offset Voltage: 30µV (Max@25°C) • Quiescent Current: 180µA per Amplifier (Typ) • Operating Temperature: -45°C ~ +12

文件：624.66 Kbytes 页数：14 Pages

GAINSIL

聚洵

1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features • Single-Supply Operation from +1.8V ~ +5.5V • Rail-to-Rail Input / Output • Gain-Bandwidth Product: 1.8MHz (Typ@25°C) • Low Input Bias Current: 20pA (Typ@25°C) • Low Offset Voltage: 30µV (Max@25°C) • Quiescent Current: 180µA per Amplifier (Typ) • Operating Temperature: -45°C ~ +12

文件：624.66 Kbytes 页数：14 Pages

GAINSIL

聚洵