N 沟道，Power Trench® MOSFET，40V，108A，2.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺生产。 先进的硅技术和 Dual CoolTM 封装技术完美融合，可在提供最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性能。 • Dual CoolTM 顶侧冷却PQFN封装\n• 最大值 rDS(on) = 2.5 mΩ（VGS = 10 V, ID = 27 A时）\n• 最大值 rDS(on) = 4.1 mΩ（VGS = 4.5 V, ID = 21 A时）\n• 高性能技术可实现极低的 rDS(on)\n• 符合 RoHS 标准;

ONSEMI

安森美半导体

丝印：8321LD；Package：DualCoolTM33；N-Channel Dual CoolTM 33 PowerTrench짰 MOSFET

文件：666.36 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P-Channel MOSFET With Gate Driver For Load Switch Application

General Description This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) toget

文件：222.09 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf

文件：251.27 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

SMALL PACKAGE PFM CONTROL STEP-UP SWITCHING REGULATOR

文件：1.92057 Mbytes 页数：26 Pages

SII

精工爱普生