N 沟道，Power Trench® MOSFET，40V，108A，2.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺生产。 先进的硅技术和 Dual CoolTM 封装技术完美融合，可在提供最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性能。 • Dual CoolTM 顶侧冷却PQFN封装\n• 最大值 rDS(on) = 2.5 mΩ（VGS = 10 V, ID = 27 A时）\n• 最大值 rDS(on) = 4.1 mΩ（VGS = 4.5 V, ID = 21 A时）\n• 高性能技术可实现极低的 rDS(on)\n• 符合 RoHS 标准;

ONSEMI

安森美半导体

丝印：8321LD；Package：DualCoolTM33；N-Channel Dual CoolTM 33 PowerTrench짰 MOSFET

文件：666.36 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P-Channel MOSFET With Gate Driver For Load Switch Application

General Description This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) toget

文件：222.09 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

2.5A Output Current, Gate Drive Optocoupler in Optoplanar Wide Body SOP 5-Pin

Description The FOD8321 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving medium power IGBT/MOSFETs. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power systems. Features ■ Fairchild’

文件：2.09306 Mbytes 页数：19 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司