N 沟道，Power Trench® MOSFET，30V，14.8A，7.2mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻而定制的。 该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •VGS = 10 V，ID = 14.8 A时，最大rDS(on) = 7.2 mΩ\n•VGS = 4.5 V，ID = 12.4 A时，最大rDS(on) = 9.5 mΩ\n•通态电阻rDS(on)极低的高性能技术\n•终端是符合RoHS标准的无铅产品;

ONSEMI

安森美半导体

N-Channel Power Trench짰 MOSFET 30 V, 14.8 A, 7.2 m

文件：213.79 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 30 V, 6.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

文件：316.22 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Gated PMT Modules

The H7680/-01 PMT modules are capable of high-speed, high-repetition gated operation. An optimum design in the combination of circuit and photomultiplier tube delivers excellent gating characteristics including a minimum gate width of 30 ns (H7680-01), 100 kHz repetition rate, and a gate extinctio

文件：109.93 Kbytes 页数：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Backflush protection circuit with built-in inductive load current

文件：598.92 Kbytes 页数：6 Pages

HMSEMI

华之美半导体