P 沟道，PowerTrench® MOSFET，-20V，-56A，6.5mΩ

此 P 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺生产，这一先进工艺已针对 rDS(ON)、开关性能和稳固性进行了优化。 • 最大值 rDS(on) = 6.5 mΩ（VGS = -4.5 V, ID = -14 A 时）\n• 最大值 rDS(on) = 9.8 mΩ（VGS = -2.5 V, ID = -11 A 时）\n• 最大值 rDS(on) = 20 mΩ（VGS = -1.8 V、ID = -9 A 时）\n• 高性能沟道技术可实现极低的 rDS(on)\n• 高功率和高电流处理能力，采用广泛使用的表面贴装封装\n• 无铅并符合 RoHS 标准;

ONSEMI

安森美半导体

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

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FAIRCHILD

仙童半导体

30V N-Channel PowerTrench MOSFET

文件：116.39 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6688AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688AS includes an integrated Schottky dio

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FAIRCHILD

仙童半导体