N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，64A，6.8mΩ

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has beenoptimized to minimise on on-state resistance and yet maintain in class soft body diode • Shielded Gate MOSFET Technology\n• Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A\n• Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A\n• 5 V Drive Capable\n• 50% lower Qrr than other MOSFET suppliers\n• Lowers switching noise/EMI\n• MSL1 robust package design\n• 100% UIL tested\n• RoHS Compl;

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丝印：7N08LDC；Package：PQFN8；MOSFET - N?륝hannel Shielded Gate POWERTRENCH

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N-Channel Shielded Gate POWERTRENCH MOSFET

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MOSFET - Power, Single N-Channel

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MOSFET - Power, Single N-Channel

文件：176.47 Kbytes 页数：8 Pages

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