功率 MOSFET 80V，单 N 沟道，84A，6.7mΩ，采用 Power 56 封装。

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A\n• Max rDS(on) = 9.9 mΩ at VGS = 4.5 V, ID = 17 A\n• 50% Lower Qrr than Other MOSFET Suppliers\n• Lowers Switching Noise/EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n• Logic Level dr;

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丝印：FDMS007N08LC；Package：PQFN8；N-Channel Shielded Gate POWERTRENCH MOSFET

文件：514.03 Kbytes 页数：8 Pages

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MOSFET - Power, Single N-Channel

文件：176.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel

文件：176.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel

文件：176.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体