P 沟道，PowerTrench® MOSFET，-20V，-9.4A，20mΩ

该器件专为手机和其他超便携应用中的电池充电或负载开关而设计。 包含一个具有低导通电阻的MOSFET和齐纳二极管防静电放电保护。 MicroFET 2X2 封装因其外形尺寸而具有卓越的热性能，非常适合线性模式应用。 •VGS = -4.5 V，ID = -9.4 A时，最大rDS(on) = 20mΩ\n•VGS = -2.5 V，ID = -8.6 A时，最大rDS(on) = 24mΩ\n•VGS = -1.8 V，ID = -7.2 A时，最大rDS(on) = 34mΩ\n•薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装\n•HBM ESD 保护电平> 2.8 kV 典型值（注 3）\n•不含有卤化合物和氧化锑\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Single P-Channel PowerTrench짰 MOSFET

文件：236.64 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

PNP (DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS)

DRIVER STAGE OF AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS • Complement to KSC2310 • Collector-Emitter Voltage VCEO= -150V • Output Capacitance: Cob=5pF (MAX)

文件：78.19 Kbytes 页数：2 Pages

SAMSUNG

三星

Ultra-high Speed Response OPIC Photocoupler

■ Features 1. Ultra-high speed response ( tPHL , tPLH : TYP. 50ns at RL = 350Ω) 2. Isolation voltage between input and output ( Viso : 2500Vrms ) 3. Low input current drive( IFHL : MAX. 5mA ) 4. Instantaneous common mode rejection voltage( CMH : TYP. 500V/ µs ) 5. TTL and LSTTL compat

文件：66.32 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and

文件：114.44 Kbytes 页数：13 Pages

PHI

PHI