-12V单P沟道PowerTrench® MOSFET

该器件专为手机和其他超便携应用中的电池充电或负载开关而设计。 它提供了具有低通态电阻的MOSFET。MicroFET 2X2封装因其外形尺寸而具有卓越的热性能，非常适合线性模式应用。 •VGS = -4.5 V且ID = -10 A时，最大rDS(on) = 16 mΩ \n•VGS = -2.5 V且ID = -8.9 A时，最大rDS(on) = 21 mΩ \n•VGS = -1.8 V且ID = -4.5 A时，最大rDS(on) = 82 mΩ \n•薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装\n•不含有卤化合物和氧化锑\n•符合RoHS标准;

ONSEMI

安森美半导体

New Products, Tips and Tools for Power and Mobile Applications

文件：2.11066 Mbytes 页数：8 Pages

Fairchild

仙童半导体

New Products, Tips and Tools for Power and Mobile Applications

文件：2.11066 Mbytes 页数：8 Pages

Fairchild

仙童半导体

The FT905 series contains FT905, FT906, FT907 and FT908 which is a complete System-On-Chip 32-bit RISC microcontroller for embedded applications featuring a high level of integration and low power consumption.

文件：1.02023 Mbytes 页数：56 Pages

FTDI

飞特帝亚

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

文件：59.31 Kbytes 页数：6 Pages

SANYO

三洋