双 P 沟道，Power Trench® MOSFET，-30V，-3.3A，87mΩ

该器件是专门设计用作有双开关要求的单一封装解决方案，例如更大型Mosfet的栅极驱动器。 该器件具有两个带低通态电阻的独立P沟道MOSFET，以最大限度地降低传导损耗。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 旨在为增强ESD电压电平而增加了G-S齐纳管。 • Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A\n• Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A\n• HBM ESD protection level > 2 KV typical (Note 3)\n• Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm\n• RoHS Compliant;

ONSEMI

安森美半导体

Dual P-Channel PowerTrench짰 MOSFET -30 V, -3.3 A, 87 m廓

文件：302.54 Kbytes 页数：8 Pages

Fairchild

仙童半导体

RF AMPLIFIER MODEL

文件：43.41 Kbytes 页数：1 Pages

APITECH

Swing-Out Sectional Wall Mount Rack Cabinet

Available in three (3) heights, two (2) widths and two (2) depths. Optional locking doors are constructed in 16-gauge steel. The door installs in minutes and is available in the vented, tinted window and solid options. The main body is constructed in 16-gauge welded steel and includes four (4)

文件：316.72 Kbytes 页数：4 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWC Locking Door HWCD Series

16-gauge steel construction. Door styles available solid, tinted acrylic with venting, 64 airflow vented. For use with the Hammond HWC Series. In addition, the hinges can be mounted on the left or right. Includes snap-latch lock and two keys. Includes door mounting hardware. Finished in text

文件：110.59 Kbytes 页数：2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司