isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 168A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：298.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0mW

文件：521.71 Kbytes 页数：8 Pages

Fairchild

仙童半导体

MOSFET N-CH 60V 120A I2PAK

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0m廓

文件：592.2 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 168A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Ch Power MOSFET

Feature ◇ Optimized for high speed switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇

文件：778.05 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体