丝印：FDD9511L；Package：D-PAK；P-Channel Logic Level PowerTrench MOSFET

文件：208.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 32mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.22 Kbytes 页数：2 Pages

ISC

无锡固电

P 沟道，PowerTrench® MOSFET，-40 V，-25 A，21 mΩ

P-Channel POWERTRENCH® MOSFET, -40 V, -25 A, 21 mΩ • Typical RDS(on) = 17 mΩ at VGS = -10V, ID = -25 A\n• Typical Qg(tot) = 17 nC at VGS = -10V, ID = -25 A\n•UIS Capability\n•RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体

RF AMPLIFIER MODEL

文件：74.09 Kbytes 页数：1 Pages

APITECH

HERMETICALLY SEALED ELECTRO MAGNETIC RELAY

文件：63.02 Kbytes 页数：3 Pages

HONGFA

宏发电声

isc N-Channel MOSFET Transistor

文件：280.02 Kbytes 页数：2 Pages

ISC

无锡固电