30V N-Channel PowerTrench SyncFET

General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a M

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench MOSFET

文件：110.7 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极点和、低RDS(ON)、快速开关和超低RDS(ON)进行了优化，采用小型封装。 •66 A，30 V。\n•RDS(on) = 8 mΩ @ VGS = 10 V\n•RDS(on) = 10 mΩ @ VGS = 4.5 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体