FDB10AN06A0

N-ChannelPowerTrenchMOSFET60V,75A,10.5m?

Features •rDS(ON)=9.5mΩ(Typ.),VGS=10V,ID=75A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement

FDD10AN06A0

N-ChannelPowerTrenchMOSFET60V,50A,10.5m?

FDP10AN06A0

N-ChannelPowerTrenchMOSFET60V,75A,10.5m?

Features •rDS(ON)=9.5mΩ(Typ.),VGS=10V,ID=75A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement

FDP10AN06A0

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc