FDC6321C中文资料仙童半导体数据手册PDF规格书
FDC6321C规格书详情
General Description
These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
特性 Features
■ N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V
■ P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.
■ Very low level gate drive requirements allowing direct
operation in 3 V circuits. VGS(th) < 1.0V.
■ Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
■ Replace multiple dual NPN & PNP digital transistors.
产品属性
- 型号：
FDC6321C
- 功能描述：
MOSFET SSOT-6 COMP N-P-CH
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
24+ |
SSOT-6 |
5645 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
FAIRCHILD/仙童 |
24+ |
SOT-163 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
Fairchild |
24+ |
SOT-23-6 |
33450 |
原装现货假一赔十 |
询价 | ||
22+ |
5000 |
询价 | |||||
ON |
23+ |
SOT23-6 |
7000 |
询价 | |||
FAIRCHILD/仙童 |
22+ |
SOT163 |
3800 |
只做原装,价格优惠,长期供货。 |
询价 | ||
FAIRCHILD |
24+ |
只做原装 |
5850 |
进口原装假一赔百,现货热卖 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT23-6 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
ON/安森美 |
24+ |
SOT23-6 |
9000 |
代理货源假一赔十 |
询价 | ||
ON |
24+ |
SOT23-6 |
5000 |
十年沉淀唯有原装 |
询价 |
