FDC6304P中文资料仙童半导体数据手册PDF规格书
FDC6304P规格书详情
General Description
These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
特性 Features
■ -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V.
■ Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.
■ Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
产品属性
- 型号：
FDC6304P
- 功能描述：
MOSFET SSOT-6 P-CH -25V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
SOT23-6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
ON/安森美 |
2023+ |
SOT23-6 |
15000 |
专注全新正品,优势现货供应 |
询价 | ||
FAIRCHILD |
24+ |
SOT23-6 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
询价 | ||
ONSEMI/安森美 |
2511 |
TSOP-6 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SSOT-6 |
38993 |
FAIRCHILD/仙童全新特价FDC6304P即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD |
24+ |
SOT23-6 |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
FAIRCHILD |
24+ |
SOT23 |
3000 |
全新原装现货 优势库存 |
询价 | ||
ON/安森美 |
23+ |
SOT-163 |
50000 |
原装正品 支持实单 |
询价 | ||
FAIRCHILD |
23+24 |
SOT23-6 |
28950 |
专营原装正品SMD二三极管,电源IC |
询价 | ||
ON/安森美 |
2025+ |
TSOT-23-6 |
5000 |
原装进口价格优 请找坤融电子! |
询价 |
