FDC6304P中文资料仙童半导体数据手册PDF规格书
FDC6304P规格书详情
General Description
These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
特性 Features
■ -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V.
■ Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.
■ Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
产品属性
- 型号：
FDC6304P
- 功能描述：
MOSFET SSOT-6 P-CH -25V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
SOT23-6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
FAIRCHILD |
1343+ |
SOT23-6 |
2880 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON |
23+ |
SOT23-6 |
3000 |
正规渠道,只有原装! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
FAIRCHILD |
24+ |
SOT23-6 |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ON/安森美 |
2223+ |
SOT23-6 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
FSC |
24+ |
6-SOT |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
FAIRCHILD/仙童 |
新年份 |
SSOT-6 |
13450 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
询价 | ||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
SOT-23-6 |
30000 |
优势供应 实单必成 可13点增值税 |
询价 |
