Digital FET, Dual P-Channel

General Description These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially f

文件：74.28 Kbytes 页数：4 Pages

Fairchild

仙童半导体

双 P 沟道，数字 FET，-25V，-0.46A，1.1Ω

这些P沟道增强模式场效应晶体管采用飞兆半导体专有的高单元密度、DMOS技术。 这种高密度工艺专为最大限度地降低低栅极驱动条件下的通态电阻而定制。 该器件特别为电池供电应用设计，例如笔记本电脑和手机。 该器件即使在栅极驱动电压低至2.5V时仍具有出色的通态电阻。 •-25V、-0.46A（连续值）、-1.0A（峰值） \n•RDS(ON) = 1.5 Ω @ VGS= -2.7 V\n•RDS(ON) = 1.1 Ω @ VGS = -4.5 V\n•栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V。\n•栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型;

ONSEMI

安森美半导体

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：227.13 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：227.13 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller

The HIP6304 multi-phase PWM control IC together with its companion gate drivers, the HIP6601, HIP6602 or HIP6603 and Intersil MOSFETs provides a precision voltage regulation system for advanced microprocessors. Features • AMD Athlon™ Compatible Multi-Phase Power Conversion • Precision Channel C

文件：176.39 Kbytes 页数：14 Pages

Intersil