Dual P-Channel 1.8V PowerTrench Specified MOSFET

General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features • –2.3 A, –20 V.

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：312F；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Ros(on) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

文件：2.10508 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Dual P-Channel 20 V (D-S) MOSFET

文件：1.08644 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

双 P 沟道，PowerTrench® MOSFET，1.8V 指定，-20V，-2.3A，115mΩ

这些P沟道1.8V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 •–2.3 A，–20 V。\n•VGS = –4.5 V时，RDS(ON) = 115 mΩ\n•VGS = –2.5 V时，RDS(ON) = 155 mΩ\n•VGS = –1.8 V时，RDS(ON) = 225 mΩ\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半导体