isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=300A@ TC=25℃ ·Drain Source Voltage- VDSS= 40V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Powe

文件：436.22 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：FDBL9401L；Package：H-PSOF8L；N?륝hannel Logic Level PowerTrench MOSFET

文件：382.21 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 40 V, 0.67 m, 240 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Small Footprint (TOLL) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：222.51 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

文件：385.62 Kbytes 页数：6 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，40V，300A，0.5mΩ

N-Channel PowerTrench® MOSFET for automotive engine control, power-train management, solenoid and motor drivers, integrated starters / alternators, primary switch for 12-V systems. • Typical RDS(on) = 0.5 mΩ at VGS = 10V, ID = 80 A\n• Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体

Power MOSFET, Single N-Channel, 40 V, 0.67 mΩ, 240 A

Automotive Power MOSFET in a TOLL package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant\n• Small Footprint (TOLL) for Compact Design;

ONSEMI

安森美半导体

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，300 A，0.55 mΩ

N-Channel Logic Level PowerTrench® MOSFET for automotive engine control, power-train management, solenoid and motor drivers, integrated starters / alternators, primary switch for 12-V systems. • Typical RDS(on) = 0.47 mΩ at VGS = 10V, ID = 80 A\n• Typical Qg(tot) = 269 nC at VGS = 10V, ID = 80 A\n• UIS Capability\n• Qualified to AEC Q101\n• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant;

ONSEMI

安森美半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 40V 58.4/240A 8HPSOF

ONSEMI

安森美半导体