isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：332.13 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel PowerTrench MOSFET

文件：608.74 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，250V，50A，42.5mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 36.3mΩ （典型值）@ VGS = 10V, ID = 25A\n•高性能沟道技术可实现极低的 RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

Open Carrier Frequency Doubler For Microwave Telecommunications

Description The FDC2710 is a passive bridge diode frequency doubler, designed for use in the high volume commercial and test equipment applications. The design utilizes Schottky bridge quad diodes and broadband baluns to attain excellent performance. The use of high temperature solder and welded

文件：230.53 Kbytes 页数：3 Pages

MACOM

Open Carrier Frequency Doubler For Microwave Telecommunications

Description The FDC2710 is a passive bridge diode frequency doubler, designed for use in the high volume commercial and test equipment applications. The design utilizes Schottky bridge quad diodes and broadband baluns to attain excellent performance. The use of high temperature solder and welded

文件：514.64 Kbytes 页数：3 Pages

MA-COM

Open Carrier Frequency Doubler

文件：514.64 Kbytes 页数：3 Pages

MA-COM