isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：333.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET 75V, 58A, 16m?

文件：267.52 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，75 V，58 A，16 mΩ

N-Channel PowerTrench® MOSFET, 75 V, 58 A, 16 mΩ, \nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 13 mΩ（典型值） @ VGS = 10 V, ID = 58 A\n•QG(tot) = 28 nC (Typ.) @ VGS = 10 V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体

N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?

文件：242.77 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

文件：690.05 Kbytes 页数：4 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

文件：328.37 Kbytes 页数：2 Pages

ISC

无锡固电