isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?

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FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 75V, 80A, 4.5m廓

文件：523.99 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

丝印：FDB045AN08A0；Package：TO-263AB；N-Channel PowerTrench® MOSFET 75V, 80A, 4.5m

Features • rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • 42V Automotive Load Control • Starter / Altern

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ONSEMI

安森美半导体

N 沟道 PowerTrench® MOSFET 75V，80 A，4.5 mΩ

N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ\nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 3.9mΩ (Typ.) @ VGS = 10V, ID = 80A\n•QG(tot) = 92nC (Typ.) @ VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101，以前的开发类型为 82684;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 75V, 80A, 4.5m廓

文件：523.99 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 75V, 80A, 4.5m

文件：258.44 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 75V, 80A, 4.5m

文件：258.44 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体