75 V、80 A、3.9 mΩ、D2PAKN 沟道 PowerTrench®

N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ, \nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •rDS(ON) = 3.9 mΩ （典型值）、VGS = 10 V、ID = 80 A\n•Qg(tot) = 92nC （典型值），VGS = 10V\n•低米勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N 沟道 PowerTrench® MOSFET 75V，80 A，4.5 mΩ

N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ\nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 3.9mΩ (Typ.) @ VGS = 10V, ID = 80A\n•QG(tot) = 92nC (Typ.) @ VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101，以前的开发类型为 82684;

ONSEMI

安森美半导体