FCPF250N65S3

isc N-Channel MOSFET Transistor

FCPF250N65S3L1

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCPF250N65S3L1-F154

丝印：FCPF250N65S3；Package：TO-220F；MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFETIIIMOSFETisonsemi’sbrand−newhighvoltage super−junction(SJ)MOSFETfamilythatisutilizingchargebalance technologyforoutstandinglowon−resistanceandlowergatecharge performance.Thisadvancedtechnologyistailoredtominimize conductionloss,providessupe

FCPF250N65S3R0

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

FCPF250N65S3R0L

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，250 mΩ，TO-220F; • Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n• 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)\n• Lower switching loss\n• Ultra Low Gate Charge (Typ. Qg = 24 nC)\n• Lower switching loss\n• Typ. RDS(on) = 210 mΩ\n• 100% Avalanche Tested\n• Internal Gate resistance: 1.1 Ω\n• RoHS Compliant\n;

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

FCPF250N65S3R0L-154

丝印：FCPF250N65S3R0；Package：TO-220F；MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

FCPF250N65S3R0L-F154

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

FCPF250N65S3L1

N-Channel SuperFET MOSFET