isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-Channel SuperFET MOSFET

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ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，250 mΩ，TO-220F

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swit • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 24 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillati;

ONSEMI

安森美半导体

丝印：FCPF250N65S3；Package：TO-220F；MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides supe

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ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F Ultra narrow lead

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 24 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillati;

ONSEMI

安森美半导体