丝印：FCPF11N60；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

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丝印：FCPF11N60F；Package：TO-220F；N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ

Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Solar Inverter

文件：470.65 Kbytes 页数：10 Pages

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丝印：FCPF11N60T；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FCPF11N60；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FCPF11N60F；Package：TO-220F；N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ

Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Solar Inverter

文件：470.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF11N60T；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

SuperFET

General Description SuperFET™ is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize cond

文件：810.42 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

文件：620.41 Kbytes 页数：17 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：836.71 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司