600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

600V N-Channel MOSFET

文件：775.46 Kbytes 页数：10 Pages

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600V N-Channel MOSFET

文件：790.22 Kbytes 页数：10 Pages

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MOSFET N-CH 600V 20A TO-247

ONSEMI

安森美半导体

600V N-Channel MOSFET

文件：775.46 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

文件：790.22 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体