FCH165N65S3R0中文资料Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-247数据手册ONSEMI规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
• Low switching loss
• Ultra Low Gate Charge (Typ. Qg = 39 nC)
• Low switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 140 mΩ
• Internal Gate Resistance: 0.5 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS