FCH125N65S3R0中文资料功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，24 A，125 mΩ，TO-247数据手册ONSEMI规格书

描述 Description

SuperFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy-drive series helps manage EMI issues and allows for easier design implementation.

特性 Features

• 700 V @ TJ = 150 oC
• Higher system reliability at low temperature operation
• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
• Low switching loss
• Ultra Low Gate Charge (Typ. Qg = 46 nC)
• Low switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 105 mΩ
• Internal Gate Resistance: 0.5 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS