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HITACHI

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NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

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POINN

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th

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STMICROELECTRONICS

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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This device is suitable to drive a DC motor in

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STMICROELECTRONICS

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