丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30AF；Package：SOPowerPAD(DDA)；LMR23630 SIMPLE SWITCHER® 36-V, 3-A Synchronous Step-Down Converter

1 Features • 4-V to 36-V Input range • 3-A Continuous output current • Integrated synchronous rectification • Current-mode control • Minimum switch on-time: 60 ns • Internal compensation for ease of use • 400-kHz Switching frequency and adjustable frequency options • PFM and forced PWM mo

文件：2.98123 Mbytes 页数：49 Pages

TI

德州仪器

丝印：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 页数：6 Pages

HARRIS

丝印：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：80.85 Kbytes 页数：8 Pages

Intersil