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F2013

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:38.19 Kbytes 页数:2 Pages

Polyfet

MSP430F2013IPW

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

MSP430F2013IPW.B

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

MSP430F2013IPWR

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

MSP430F2013IPWR.B

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

F2013ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件:225.6 Kbytes 页数:2 Pages

MPD

F2013ERW

F2000ERW SERIES

文件:217.73 Kbytes 页数:2 Pages

MPD

F2013ERW

Compact, 20W Low Cost, 2:1 Input, DC/DC Converters

MPD

技术参数

  • Output V:

    12 VDC

  • Output I:

    1

供应商型号品牌批号封装库存备注价格
POLYFET
2019+
SMD
6992
原厂渠道 可含税出货
询价
POLYFET
23+
1688
房间现货库存:QQ:373621633
询价
POLYFET
24+
10
询价
POLYFET
23+
高频管
550
专营高频管模块,全新原装!
询价
TI
23+
TSSOP14
8650
受权代理!全新原装现货特价热卖!
询价
ADI/亚德诺
专业铁帽
TSSOP14
1558
原装铁帽专营,代理渠道量大可订货
询价
POLYFET
24+
172
现货供应
询价
TI/德州仪器
20+
TSSOP14
67500
原装优势主营型号-可开原型号增税票
询价
TI
20+
TSSOP14
2960
诚信交易大量库存现货
询价
POLYFET
23+
TO-59
8510
原装正品代理渠道价格优势
询价
更多F2013供应商 更新时间2025-12-10 16:04:00