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F200

HCMOS 2.5x2mm 1.0 V SMD Oscillator

文件:133.69 Kbytes 页数:2 Pages

FOX

F200

Miniature Based LED Lamps

文件:4.95484 Mbytes 页数:28 Pages

LEDTRONICS

F200

低失调低功耗双运算放大器

749

七四九

749

F2000ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件:225.6 Kbytes 页数:2 Pages

MPD

F2001

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim

文件:37.85 Kbytes 页数:2 Pages

POLYFET

F2001ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件:225.6 Kbytes 页数:2 Pages

MPD

F2002

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:37.9 Kbytes 页数:2 Pages

POLYFET

F2002ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件:225.6 Kbytes 页数:2 Pages

MPD

F2003

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:37.6 Kbytes 页数:2 Pages

POLYFET

F2003ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件:225.6 Kbytes 页数:2 Pages

MPD

技术参数

  • 3 dB BW MHz min:

    40

  • IL dB max:

    6.5

  • IR dB min:

    2

  • ORI dB min:

    60

  • ORS dB min:

    40

供应商型号品牌批号封装库存备注价格
24+
DIP
39
询价
POLYFET
23+
高频管
330
专营高频管模块,全新原装!
询价
高频管
23+
高频管
5000
原装正品,假一罚十
询价
TI
24+
TSSOP
5000
全现原装公司现货
询价
ST
25+
TO-39
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
VTM
23+
原厂封装
11888
专做原装正品,假一罚百!
询价
POLYFET
25+
TO-63S
90000
一级代理商进口原装现货、价格合理
询价
TI/德州仪器
24+
300
现货供应
询价
TI
20+
TSSOP14
35830
原装优势主营型号-可开原型号增税票
询价
MICROPOWER
2022+
51800
全新原装 货期两周
询价
更多F200供应商 更新时间2026-4-18 16:30:00