丝印：F1056；Package：SOIC；8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems description This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device consists of an 8-bit high

文件：234.78 Kbytes 页数：9 Pages

TI

德州仪器

丝印：F1056；Package：SOIC；8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems description This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device consists of an 8-bit high

文件：234.78 Kbytes 页数：9 Pages

TI

德州仪器

丝印：F109；Package：SOIC；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs description These devices contain two independent J-K positive-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the

文件：904.8 Kbytes 页数：15 Pages

TI

德州仪器

丝印：F109；Package：SOIC；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs description These devices contain two independent J-K positive-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the

文件：904.8 Kbytes 页数：15 Pages

TI

德州仪器

丝印：F109；Package：SOIC；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs description These devices contain two independent J-K positive-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the

文件：904.8 Kbytes 页数：15 Pages

TI

德州仪器

丝印：F10NK50Z；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designe

文件：525.78 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：F10D3；Package：DFN2020-3L；400W Transient Voltage Suppression Diodes

文件：1.09983 Mbytes 页数：11 Pages

FUTUREWAFER

丝印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes 页数：292 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes 页数：292 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes 页数：292 Pages

TI

德州仪器