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F1040

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:32.63 Kbytes 页数:2 Pages

Polyfet

F1046

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

文件:90.16 Kbytes 页数:5 Pages

PETERMANN

F1057223

HelioProtection® HP15NH Photovoltaic fuse-links gPV 1500VDC

FEATURES & BENEFITS • Global acceptance • Low fault current interrupting capability • Temperature cycle withstand capability • Durable construction for enhanced system longevity • High efficiency with low power losses • Available in 3 versions: plain blade, direct mounted, direct mounted wit

文件:2.62155 Mbytes 页数:18 Pages

MERSEN

美尔森

F1058

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:38.08 Kbytes 页数:2 Pages

Polyfet

F1060

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:38.16 Kbytes 页数:2 Pages

Polyfet

F1061616

1000V DC Midget (10x38mm) Photovoltaic Fuses

FEATURES/BENEFITS: • Low fault current interrupting capability • Durable construction for enhanced system longevity • Temperature cycle withstand capability • Guaranteed operation at temperature extremes • Industry’s first UL Listed Solution • Globally accepted

文件:318.42 Kbytes 页数:2 Pages

MERSEN

美尔森

F1063

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:32.47 Kbytes 页数:2 Pages

Polyfet

F1065

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:36.42 Kbytes 页数:2 Pages

Polyfet

F1065434

HelioProtection® HP15NH Photovoltaic fuse-links gPV 1500VDC

FEATURES & BENEFITS • Global acceptance • Low fault current interrupting capability • Temperature cycle withstand capability • Durable construction for enhanced system longevity • High efficiency with low power losses • Available in 3 versions: plain blade, direct mounted, direct mounted wit

文件:2.62155 Mbytes 页数:18 Pages

MERSEN

美尔森

F1066

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:39.46 Kbytes 页数:2 Pages

Polyfet

产品属性

  • 产品编号:

    F10

  • 制造商:

    XP Power

  • 类别:

    电源 - 板安装 > 直流转换器

  • 系列:

    XP EMCO - F (10W)

  • 包装:

    管件

  • 类型:

    高电压 - 隔离模块

  • 电压 - 输入(最小值):

    0.7V

  • 电压 - 输入(最大值):

    12V

  • 电压 - 输出 1:

    1000V

  • 电流 - 输出(最大值):

    10mA

  • 应用:

    ITE(商业)

  • 特性:

    比例输出

  • 工作温度:

    -10°C ~ 70°C

  • 安装类型:

    通孔

  • 封装/外壳:

    5-DIP 模块

  • 大小 / 尺寸:

    2.80" 长 x 1.70" 宽 x 0.85" 高(71.1mm x 43.2mm x

  • 描述:

    DC DC CONVERTER 1000V 10W

供应商型号品牌批号封装库存备注价格
NS
24+
5.2mm14
73
全新现货
询价
16+
QFP
1588
全新、原装
询价
XP Power
24+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
询价
BOHCHIP
25+
TQFP
10500
全新原装现货,假一赔十
询价
BOXCHIP全志
14+
QFP
6000
优势
询价
ALLWINNER
2447
QFP176
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MIC
23+
SOT23-5
50000
全新原装正品现货,支持订货
询价
BOHCHIP
24+
NA/
3287
原装现货,当天可交货,原型号开票
询价
全志
23+
BGA
5000
专注配单,只做原装进口现货
询价
MIC
25+
SOT23-5
12
原装正品,假一罚十!
询价
更多F10供应商 更新时间2025-11-30 16:01:00