Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌

1ED3142MU12F 评估板 - 2300 V、6.5 A、3 kV (rms) 单通道隔离栅极驱动器

EVAL-1ED3142MU12F-SIC 采用两个 1ED3142MU12F 栅极驱动器 IC，分别用于 IGBT、MOSFET 和 SiC MOSFET。它预装了 CoolSiC ™ MOSFET IMZA120R020M1H，并配有用于隔离过流反馈的附加栅极驱动器 IC。1ED3142MU12F 提供独立的灌电流和源电流输出、稳定的时序、主动关断和短路钳位，可在单极或双极配置的宽电源电压范围内运行。 • 单通道隔离栅极驱动器\n• 适用于高达 2300 V 的 Si 和 SiC 开关\n• 2300 V 功能。失调电压能力\n• 电气隔离\n• 6.5典型的接收器和源峰值输出。\n• 45 ns 特性。延迟 w/ 20 ns 输入\n• 高 CMTI >300 kV/μs\n• 独立的源输出和吸输出\n• 短路钳位\n• 有源关断\n• DSO-8 150 mil 窄体封装;

Infineon

英飞凌

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

Infineon

英飞凌