丝印：3142MU12；EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

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丝印：3142MU12；Package：3142MU12；Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

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6.5 A、3 kV（均方根值）单通道隔离栅极驱动器，具有独立输出，经 UL 1577 认证，13.6 V UVLO

\n优势:\n• Integrated filters reduce the need of external filters\n• Tight part-to-part turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature\n• Suitable for operation at high ambient temperature and in fast ;

Infineon

英飞凌

Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

INFINEON

英飞凌