丝印：3142MU12；EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

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丝印：3142MU12；Package：3142MU12；Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

文件：2.10373 Mbytes 页数：51 Pages

Infineon

英飞凌