N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 60mΩ ID 3.2A Pb‐Free Lead Plating & Halogen Free ESD Protection

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EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

30V-Channel Mosfet

文件：3.52397 Mbytes 页数：6 Pages

FOSTER

福斯特半导体

N-Channel Logic Level PWM Optimized Power MOSFET

文件：238.51 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.0135Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电