丝印：Z1；Package：EMT6；General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：102.34 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：Z1；Package：UMT6；General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：Z1；Package：EMT6；General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：Z1；Package：EMT6；General purpose transistor

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

Silicon Epitaxial Planar

FEATURES 2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting cost and area can be cut in half.

文件：1.15103 Mbytes 页数：4 Pages

SECOS

喜可士

丝印：Z1；Package：SOT-563；Dual NPNPNP transistors

文件：579.63 Kbytes 页数：4 Pages

FS

Dual Transistors (NPNPNP)

文件：814.14 Kbytes 页数：4 Pages

JIANGSU

长电科技

Dual Transistors

文件：595.24 Kbytes 页数：3 Pages

MCC

Dual General Purpose Transistors

Dual General Purpose Transistors NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. Features •Lead−Free Solder Plating •Low VCE(SAT), 0

文件：63.85 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. Features •Lead−Free Solder Plating •Low VCE(SAT), 0

文件：63.85 Kbytes 页数：6 Pages

ONSEMI

安森美半导体