N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 20V RDSON (MAX.) 20mΩ ID 6A Pb‐Free Lead Plating & Halogen Free

文件：214.11 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 20V RDSON (MAX.) 18mΩ ID 7A Pb‐Free Lead Plating & Halogen Free

文件：193.53 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 20V RDSON (MAX.) 20mΩ ID 7A Pb‐Free Lead Plating & Halogen Free

文件：195.39 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The T F20N02combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

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TUOFENG

拓锋半导体